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Title:
LIGHT EMITTING DIODE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3531722
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a light emitting diode in which improvement in luminous intensity higher than usual can be attained roughening the primary surface of the diode.
SOLUTION: The primary surface 6 composed of a GaAsP mixed crystal is roughened by wet etching to improve the light-takeout efficiency, and the etching condition is regulated so that the grain size becomes 0.3 to 3 μm. Light emitted from a gallium arsenide phosphide GaAsP mixed crystal is approximately 600 nm in peak wavelength ranging from yellow light of wavelength about 580 nm to red light of 650 nm, and the roughening degree is regulated so that the grain size on the primary surface 6 of a pellet 20 falls in a range of 0.3 to 3 μm that is slightly wider than that wavelength band, and then the probability of light total reflection is appropriately lowered and the light takeout efficiency can be improved.


Inventors:
Suzuki, Kingo
Ikeda, Hitoshi
Application Number:
JP1998000373153
Publication Date:
March 12, 2004
Filing Date:
December 28, 1998
Export Citation:
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Assignee:
SHIN ETSU HANDOTAI CO LTD
International Classes:
H01L33/22; H01L33/30; (IPC1-7): H01L33/00