To provide a rapid response and high output light-emitting diode which emits red light and/or infrared light, and to provide a light-emitting diode lamp and a luminaire.
The light-emitting diode comprises: a light emission part which includes an active layer of quantum well structure where a well layer consisting of a compound semiconductor having a composition formula of (AlX1Ga1-X1)As(0≤X1≤1) and a barrier layer are laminated alternately, and which includes a first clad layer and a second clad layer sandwiching the active layer; a current diffusion layer formed on the light emission part; and a functional substrate bonded to the current diffusion layer. The first and second clad layers consist of a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1 P(0≤X2≤1, 0<Y1≤1), and the number of pairs of the well layer and barrier layer is 5 or less.
| JPH0722713A | 1995-01-24 | |||
| JP2007201300A | 2007-08-09 | |||
| JP2000101132A | 2000-04-07 | |||
| JP2006066518A | 2006-03-09 | |||
| JP2004207508A | 2004-07-22 | |||
| JP2007194536A | 2007-08-02 | |||
| JP2008532281A | 2008-08-14 |
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama