Title:
LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPH01225178
Kind Code:
A
Abstract:
PURPOSE:To obtain a compound semiconductor light emitting diode having a low cost and a high efficiency by forming on an Si substrate a transparent conductive film through a semiconductor layer having a smaller band gap than that of a compound semiconductor in the diode. CONSTITUTION:A P-type indium gallium arsenide (P-type InGaAs) layer 11 formed on a P-type Al0.35Ga0.65As layer 4 and having a smaller band gap than that of the layer 4, and a transparent conductive film 12 formed on the layer 11, such as an indium tin oxide ITO (SiO2+In2O3) are provided. Thus, since the film 12 is formed through the layer 11 haivng the small band gap, the contact resistance of the film 12 with the layer 4 can be reduced, the sheet resistance of the whole layer 4 can be decreased, and a current concentration does not occur. Thus, a light emitting diode having a low cost and a high efficiency can be obtained.
Inventors:
MUROTANI TOSHIO
Application Number:
JP5101888A
Publication Date:
September 08, 1989
Filing Date:
March 03, 1988
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L33/30; H01L33/34; H01L33/42; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)