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Title:
LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPH05152609
Kind Code:
A
Abstract:
PURPOSE:To improve the visibility and brightness of a light emitting diode having a light emitting element made of a gallium nitride based compound semiconductor material having its light emitting peaks near 430nm and 370nm. CONSTITUTION:In a light emitting diode comprising a light emitting elect 11 on a stem and a resin mold 4 surrounding it, the light emitting element 11 is made of a gallium nitride based compound semiconductor specified by a general chemical formula GaxAl1-xN (where 0<=x<=1), and further, a fluorescent dye 5 or a fluorescent pigment, which emits a fluorescent light excited by the light emission of the gallium nitride based compound semiconductor, is added additionally in the resin mold 4.

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Inventors:
TADATSU YOSHIAKI
NAKAMURA SHUJI
Application Number:
JP33601191A
Publication Date:
June 18, 1993
Filing Date:
November 25, 1991
Export Citation:
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Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L33/32; H01L33/50; H01L33/56; (IPC1-7): H01L33/00
Domestic Patent References:
JPS5441660U1979-03-20



 
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