Title:
LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPS5866375
Kind Code:
A
Abstract:
PURPOSE:To enhance light emitting efficiency by setting the light emitting wavelength of diode to the maximum sensitivity region by forming the specified conductive layer continuously grown with the silicon used as the effective impurity and the other conductive layer having reverse conductivity type thereto, and by fixing the one layer directly in the case while using the other layer as the light emitting layer. CONSTITUTION:An N type GaAlAs layer 12 consisting of the silicon-added K, Al and As of the one conductivity type is deposited on a GaAs substrate 11 by the liquid phase growth method, and moreover a P type GaAlAs layer 13 consisting of K, Al and As of the reverse conductivity type are also deposited thereon. The one of the layer 12 or 13 of the diode element by these layers 12, 13 is fixed directly to the base 41 of case, while the lead wire 42 or 43 connected to the electrode is connected to the other layer 13 or 12, and the layer 13 or 12 is formed as the light emitting surface of the light L. The wavelength of light emitted of diode element is considered as the maximum sensitivity region and thereby light emitting efficiency can be improved.
Inventors:
HASEGAWA OSAMU
Application Number:
JP16508381A
Publication Date:
April 20, 1983
Filing Date:
October 16, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L33/30; H01L33/40; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
| JPS4876483A | 1973-10-15 |
Attorney, Agent or Firm:
Sadaichi Igita