To provide a light emitting element having a single crystal semiconductor layer of good crystallinity formed on a low crystallinity amorphous substrate, for example, its fabricating method and a display.

A semiconductor layer 20 is formed on one side of a substrate 11 through an intermediate layer 12 of silicon or germanium. The intermediate layer 12 has a crystal surface at least on the side where the semiconductor layer 20 is formed. The single crystal semiconductor layer 20 is grown on the amorphous substrate 11 of quartz glass, or the like, using the semiconductor layer 20 as a base. According to the method, an element array can be formed readily on a large area substrate 11.