Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2014183285
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a light-emitting element which inhibits strain of a semiconductor structure layer, especially strain of an active layer and has high luminous efficiency and high reliability.SOLUTION: A light-emitting element 10 composed of a GaN-based semiconductor comprises a structure in which an n-type semiconductor layer 13, a superlattice structure layer 14 including at least one InGaN superlattice layer, an active layer 15, an AlGaN-based semiconductor layer 16 and a p-type semiconductor layer 17 are sequentially laminated, in which an uneven structure 16A is formed at an interface between the AlGaN-based semiconductor layer 16 and the p-type semiconductor layer 17. The active layer 15 is an InGaN layer or InGaN quantum well layers QW1-8 and an In composition of the InGaN superlattice layers SS1-4 is larger than an In composition of the active layer.
Inventors:
KUMAGAI MITSUYASU
Application Number:
JP2013058370A
Publication Date:
September 29, 2014
Filing Date:
March 21, 2013
Export Citation:
Assignee:
STANLEY ELECTRIC CO LTD
International Classes:
H01L33/32; H01L33/22
Domestic Patent References:
| JP2012059772A | 2012-03-22 | |||
| JP2004193619A | 2004-07-08 | |||
| JP2008182069A | 2008-08-07 | |||
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Foreign References:
| WO2012032915A1 | 2012-03-15 | |||
| US20100270531A1 | 2010-10-28 | |||
| US20110108798A1 | 2011-05-12 |
Attorney, Agent or Firm:
Patent business corporation レクスト international patent firm