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Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2016157759
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a light-emitting element having a group III nitride semiconductor layer, having low dislocation density, excellent in crystallinity.SOLUTION: The light-emitting element includes a semiconductor layer on a crystal substrate having a convex structure. A position of a peak top of a cathode luminescence spectrum of the semiconductor layer is greater than or equal to 446 nm and less than or equal to 452 nm. A half width of the peak is greater than or equal to 15 nm and less than 25 nm.SELECTED DRAWING: Figure 4

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Inventors:
SHINKAI KEIREI
YAMADA EMI
TANAKA SHOTARO
Application Number:
JP2015033582A
Publication Date:
September 01, 2016
Filing Date:
February 24, 2015
Export Citation:
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Assignee:
TORAY INDUSTRIES
International Classes:
H01L33/22; H01L33/32



 
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