LIGHT EMITTING ELEMENT

Japanese Patent JPS6254976

A

PURPOSE:To improve light emitting efficiency and reproducibility by providing at least a pair of electrodes electrically connected with a light emitting layer, which is formed of a nonsingle crystal silicon which contains hydrogen atoms so that the optical band gap is 2.0eV or higher. CONSTITUTION:A light emitting element is composed of a P-type conductivity layer, the first semiconductor intermediate layer I, an N-type conductivity layer and a light emitting layer 104 made of the second semiconductor intermediate layer II,and an electrode 105 formed on a light emitting layer 104 on an electrode 103 formed on a substrate 101. The hydrogen atoms in the light emitting layer compensates free dangling bond of silicon atoms, the content is an important factor for affecting the semiconductor layer of the formed layer, the optical characteristic and the light emitting characteristic of the element, and the content of the hydrogen atoms is preferably 0.1-40atom% to the silicon atoms. The optical band gap Egopt of each layer for forming the light emitting layer is 2.0eV or higher. Thus, the light emitting efficiency and the reproducibility can be enhanced to remarkably increase the stability in the light emitting characteristic and the life.

TAKASU KATSUJI
SANO MASAFUMI
TSUDA HISANORI
HIRAI YUTAKA

JP19619185A

March 10, 1987

September 04, 1985

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CANON KK

H01L21/205; H01L21/263; H01L33/06; H01L33/16; H01L33/34; H01L33/42; (IPC1-7): H01L21/205; H01L21/263; H01L33/00

Marushima Giichi

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