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Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS6461969
Kind Code:
A
Abstract:
PURPOSE:To improve corrosion-proof performance, heat resistance, scar resistance, mechanical strength, environment resistance, and reliability, by forming light-emitting diodes both on an SOS substrate and on the substrate to compose a light-emitting element and by specifying thickness of an Si layer of the SOS substrate and radiating light from this light-emitting diode and projecting this light through the substrate. CONSTITUTION:An n-type Ga1-xAlx As layer 2, a P type Ga1-yAly As layer 3, and a P<+> type GaAs layer 4 are laminated serially on an SOS substrate 1. The SOS substrate 1 is composed by forming a thin film of an Si layer 1b on an alumina single-crystalline substrate 1a. The alumina singlecrystalline substrate 1a is a transmissive substrate with very high transparency. On the other hand the Si layer 1b is set 2mum or less in its thickness so that it has also high transparency. Luminous energy generated in the respective layers 2-4 is made to pass through the SOS substrate 1. Further, the alumina single- crystalline substrate 1a is excellent in corrosion-proof performance, oxidation- proof performance, heat impact resistance, and the like. Because of its large hardness, the substrate is excellent in scar resistance, too.

Inventors:
BITO YOSHIFUMI
Application Number:
JP21972287A
Publication Date:
March 08, 1989
Filing Date:
September 02, 1987
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
H01L33/08; H01L33/30; H01L33/34; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
JPS4713867A
JPS55151377A1980-11-25
JPS51147986A1976-12-18
JPS6074483A1985-04-26
Attorney, Agent or Firm:
Katsuhiko Tahara