発光薄膜及びその光デバイス - Japan Science and Technology Agency

Title:

発光薄膜及びその光デバイス

Document Type and Number:

Japanese Patent JP4163174

Kind Code:

B2

Abstract:

To provide a light emitting thin film and optical device thereof, having high luminance, stable chemical property and capable of reducing cost.

The light emitting thin film of the invention is obtained in the following processes, vapor depositing EuSi2and SiO2on a silicon substrate 1, forming an annealed ESO (light emitting thin film) 2 on a p-type silicon substrate 1, depositing a transparent ITO electrode 3 by RF (radio frequency) sputtering to obtain an electroluminescence, on the light emitting thin film 2, forming an aluminum electrode 4 on the back side of the Si substrate 1, and then loading a DC power supply between both electrodes.

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Inventors:

Takahiro Matsumoto
Successive succession

Application Number:

JP2004344140A

Publication Date:

October 08, 2008

Filing Date:

November 29, 2004

Export Citation:

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Assignee:

Japan Science and Technology Agency

International Classes:

C09K11/79; G02F2/02; C09K11/00; C09K11/08; C23C14/06; C23C16/42; H01L31/12; H05B33/14

Domestic Patent References:

JP7263146A
JP6177062A
JP8064905A
JP7221346A
JP8127771A
JP10189240A
JP6045070A

Other References:

H.Ennen et.al,"1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy",Appl.Phys.Lett.,1985年,Vol.46, No.4,pp.381-383
S.Lombardo,S.U.Campisano,"Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon",Appl.Phys.Lett.,1993年,Vol.63, No.14,pp.1942-1944

Attorney, Agent or Firm:

Mamoru Shimizu

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