Title:
発光サイリスタおよび自己走査型発光素子アレイ
Document Type and Number:
Japanese Patent JP4292747
Kind Code:
B2
Abstract:
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
Inventors:
Seiji Ono
Application Number:
JP2002047865A
Publication Date:
July 08, 2009
Filing Date:
February 25, 2002
Export Citation:
Assignee:
Fuji Xerox Co., Ltd
International Classes:
B41J2/44; B41J2/45; B41J2/455; H01L29/74; H01L33/00; H01L33/08; H01L33/30; H01L33/40; H03K19/14; H03K19/177; H01L27/15
Domestic Patent References:
| JP2001326383A | ||||
| JP4005872A | ||||
| JP3194978A | ||||
| JP2263668A | ||||
| JP2212170A | ||||
| JP2092651A | ||||
| JP2092650A | ||||
| JP2014584A | ||||
| JP10173509A |
Foreign References:
| WO2001021412A1 |
Attorney, Agent or Firm:
Jiro Kobe
Takeshi Senda
Takeshi Senda