Title:
LIGHT GUIDE PARTS OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH03225325
Kind Code:
A
Abstract:
PURPOSE:To increase the efficiency of change of refractive index even at low voltage and to enable switching even to light having long wavelength by rendering a two-layered structure composed of an upper layer having high carrier concn. and a lower layer having low carrier concn. to an upper clad layer of an n-type semiconductor. CONSTITUTION:A two-layered structure composed of an upper layer 7b having high carrier concn. and a lower layer 7a having low carrier concn. is rendered to an upper clad layer 7 of an n-type semiconductor forming a light waveguide. Since ohmic contact is attained between the layer 7b and an upper electrode 9 and all of impressed reverse voltage acts effectively, the efficiency of change of the refractive index of a core layer 5 can be maximized even at low impressed voltage. The carrier concn. of the lower layer 7a is reduced by more than one figure as compared with the conventional concn., the light absorption loss of the layer 7a is also reduced and switching action to light having long wavelength is enabled even if the lower p-n junction face 10 of the layer 7a is brought close to the core layer 5.
Inventors:
BAKU KANMEI
YANAGAWA HISAHARU
YANAGAWA HISAHARU
Application Number:
JP2065390A
Publication Date:
October 04, 1991
Filing Date:
January 31, 1990
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD
International Classes:
G02B6/12; G02F1/025; G02F1/313; (IPC1-7): G02B6/12; G02F1/025; G02F1/313
Domestic Patent References:
| JPS61148427A | 1986-07-07 | |||
| JPS6113222A | 1986-01-21 |
Attorney, Agent or Firm:
Koji Nagato