Title:
光散乱EUVLマスク
Document Type and Number:
Japanese Patent JP2008500736
Kind Code:
A
Abstract:
A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask. The Mo/Si layer comprises uneven surfaces conformal with the sloped surfaces of the crystalline silicon layer, wherein the sloped surfaces of the Mo/Si layer may be configured as roughened, jagged, sloped, or curved surfaces, wherein the uneven surfaces deflect incoming extreme ultraviolet radiation waves to avoid collection by exposure optics and prevent printing onto a semiconductor wafer.
Inventors:
Emily E Gallagher
Louis M Kind
Carry W seal
Louis M Kind
Carry W seal
Application Number:
JP2007515303A
Publication Date:
January 10, 2008
Filing Date:
May 25, 2005
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/027; B32B9/00; B32B15/00; B32B15/04; B32B17/06; G03C5/00; G03F1/00; G03F1/14; G03F1/16; G21K1/06; G21K5/00
Domestic Patent References:
| JPH07122480A | 1995-05-12 | |||
| JPH08222497A | 1996-08-30 | |||
| JPH0396220A | 1991-04-22 | |||
| JPS605524A | 1985-01-12 | |||
| JPH01152725A | 1989-06-15 | |||
| JPH06120125A | 1994-04-28 | |||
| JP2003501823A | 2003-01-14 | |||
| JPH07283105A | 1995-10-27 |
Foreign References:
| US6368942B1 | 2002-04-09 | |||
| US6479195B1 | 2002-11-12 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi