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Title:
LIGHT SOURCE DEVICE
Document Type and Number:
Japanese Patent JP2012064728
Kind Code:
A
Abstract:

To provide a light source device which can suppress a chance that an exciton in an excited phosphor returns to a ground state in a process of non-radiation (an exciton changes into a phonon) and an occurrence of excitation saturation, and thus make it possible to improve luminous efficiency and light emission intensity.

A light source device has a phosphor layer 3 that light with a predetermined wavelength, emitted from a solid light source element 2, enters as an exciting light. The phosphor layer 3 excited by the exciting light entered causes fluorescent light to be generated and emits the fluorescent light outside. The light source device also has a metal layer 4 which is bonded on a predetermined outer surface of the phosphor layer 3 except an incidence surface the exciting light comes in and an output surface the fluorescent light goes out, and converts an exciton excited in the phosphor layer 3 into light through a surface plasmon polariton in a proximity of the predetermined surface. The light converted from the exciton through the surface plasmon polariton is emitted from the output surface of the phosphor layer 3 together with the fluorescent light.


Inventors:
KAWAKAMI YASUYUKI
MATSUMOTO TAKAHIRO
YASUDA YOSHIAKI
OKAMOTO KOICHI
Application Number:
JP2010207217A
Publication Date:
March 29, 2012
Filing Date:
September 15, 2010
Export Citation:
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Assignee:
STANLEY ELECTRIC CO LTD
OKAMOTO KOICHI
International Classes:
H01L33/50; C09K11/08; C09K11/59
Domestic Patent References:
JP2004128393A2004-04-22
JP2009043903A2009-02-26
JP2009038260A2009-02-19
JP2004128393A2004-04-22
JP2009043903A2009-02-26
JP2009038260A2009-02-19
JP2006176859A2006-07-06
JP2001040348A2001-02-13
JP2004083712A2004-03-18
JP2010080741A2010-04-08
Other References:
JPN6015013912; 川上   康之  Y.   Kawakami: 'シリコンナノ結晶における表面プラズモン発光増強効果  Photoluminescence enhancement of nano-crystallin' 2010年秋季第71回応用物理学会学術講演会講演予稿集
Attorney, Agent or Firm:
Creation International Patent Office