PURPOSE: To efficiently transmit light signal from an introduction terminal to a semiconductor light reception part by performing a light scattering prevention treatment to the end face of a light introduction path for transmitting the light signal to a semiconductor substrate.
CONSTITUTION: Reflection prevention films 101 and 102 made of, for example, silicon dioxide consisting of at least one layer are formed on both surfaces of a light introduction window 42. A reflection prevention film 105 is formed on the incidence light end face of a light guide 10. The light irradiation end face of the light guide is positioned at a light reception part 1a of a semiconductor substrate 1 using guide rings 50 and 51 and a reflection prevention film 106 made of, for example, silicon dioxide is formed also on the light irradiation end face of the light guide 10, thus suppressing the reflection of light signal causing transmission loss of light signal and transmitting the light signal efficiently from the introduction edge to the light reception part of a semiconductor substrate.
HIRASAWA KYOTARO
TAGUCHI KAZUNORI
| JPS6042875A | 1985-03-07 | |||
| JPS57102077A | 1982-06-24 |