Title:
LIGHTTEMITTING DIODE
Document Type and Number:
Japanese Patent JPS5563888
Kind Code:
A
Abstract:
PURPOSE:To improve the brilliance distribution of light emission and raise the output thereof, by reducing the current density in the peripheral part of the PN junction of a planner PN junction light-emitting diode provided with a P-type and an N-type ohmic electrodes on the same side. CONSTITUTION:A PN junction 17 is provided by a P-type GaAlAs layer 12 and an N-type GaAlAs layer 13. The junction 17 is defined by a concentric etched groove 18. A P-type ohmic electrode 16 is provided. Tellurium is diffused inside the groove 20 to produce an N<+>-type GaAlAs layer 14. An N-type ohmic electrode 15 is provided. The electrode 15 is smaller than the PN junction 17. The electrode 15 is used as a mask to etch an exposed part of an N<+>-type layer 14. As a result, it is made hard for an electrical current to flow in the peripheral part of the PN junction 17 and light emission is reduced. Thus, a distribution of luminous intensity high in the central part of the PN junction is obtained and a light emission output is increased.
Inventors:
MORI MITSUHIRO
ONO YUUICHI
ITOU KAZUHIRO
KAWADA MASAHIKO
MORIOKA MAKOTO
KURATA KAZUHIRO
ONO YUUICHI
ITOU KAZUHIRO
KAWADA MASAHIKO
MORIOKA MAKOTO
KURATA KAZUHIRO
Application Number:
JP13680478A
Publication Date:
May 14, 1980
Filing Date:
November 08, 1978
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L33/30; (IPC1-7): H01L33/00