To improve picture quality in arm active matrix liquid crystal display device forming hold capacity at every pixel between with a gate line of a former row.

The hold capacity Cs at every pixel is formed between a drain of a TFT 11 at every pixel and the gate line G of the preceding row. In a buffer 15 in a vertical drive circuit 12 for applying a gate pulse to respective gate lines G, values of channel width/channel length of an N channel MOS 15b conducting between the gate line G and a low potential side power source Vss when no gate purse is applied are made large, and on-resistance is made small.