PURPOSE: To offer a liquid-crystal panel which uses a matrix driving circuit substrate without cracking an insulating film by forming an insulating film on at least one of the 1st and the 2nd substrates which hold liquid crystal by plasma polymerization.

CONSTITUTION: A driving thin-film transistor (TFT) is provided by forming gate electrodes (row electrode) 1, 1'... connected to gate lines 1a, 1a'... formed on a substrate 12, thin-film semiconductor layers 2, 2'... which are formed while insulated by those gate electrodes and an insulating film 5, source electrodes 3, 3'... connected thereto, and drain electrodes 4, 4'.... The insulating film is formed on this TFT by plasma polymerization. Further, a counter electrode 8 and an insulating film 9 formed thereupon are arranged on a substrate 7. The plasma polymerizing method deposits an organic insulating film 6 on the substrate by causing discharge in a gas atmosphere and applicable to the insulating film 9.