Title:
LIQUID GROWTH METHOD
Document Type and Number:
Japanese Patent JPS5243362
Kind Code:
A
Abstract:
PURPOSE:To suppress evaporation of As by allowing substances evaporating in the neighborhood of epitaxial growth temperature to float at all tiems, thereby making good quality multilayered crystalline layer of Ga, As, or Ga, Al, As.
Inventors:
NISHI HIROSHI
OOSAKA SHIGEO
KUMAI TSUGIO
OOSAKA SHIGEO
KUMAI TSUGIO
Application Number:
JP11914575A
Publication Date:
April 05, 1977
Filing Date:
October 01, 1975
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/00; H01L21/208; H01L33/28; H01L33/30; (IPC1-7): B01J17/20; H01L21/208; H01L33/00
Domestic Patent References:
| JPS4813281A | ||||
| JPS4837396A | 1973-06-01 | |||
| JPS4851897A | 1973-07-20 | |||
| JPS4898774A | 1973-12-14 |