Title:
LIQUID AND METHOD FOR CLEANING SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2760418
Kind Code:
B2
Abstract:
PURPOSE: To obtain a cleaning liquid suitable for the removal of metal components and particles by directly dissolving ozone to saturation solubility in a hydrofluoric acid solution the temperature and concentration of which are controlled specified values.
CONSTITUTION: A cleaning apparatus 1 has a platform to support a carrier 3 in the bottom center of its treatment bath 2; the carrier 3 houses a plurality of wafers 4, the object of cleaning. A pure water feed pipe 5, a hydrofluoric acid feed pipe 6 and a rinsing liquid feed pipe 7 are placed at the upper part of the treatment bath 2. An ozone feed pipe 8 is also led to the treatment bath 2. The treatment bath 2 is filled with a hydrofluoric acid solution the temperature of which is controlled to 20°C below and the concentration of which is between 0.3wt.% inclusive and 0.05wt.%. Ozone is directly dissolved in the solution to saturation solubility to from a cleaning liquid, and semiconductor substrates are placed in the treatment bath 2 for etching. Thereafter-, the treatment bath 2 is fed with pure water or ozone dissolved water to rinse the semiconductor substrates.
Inventors:
MANAKO KAZUYOSHI
Application Number:
JP17923994A
Publication Date:
May 28, 1998
Filing Date:
July 29, 1994
Export Citation:
Assignee:
SUMITOMO SHICHITSUKUSU KK
International Classes:
C11D7/02; C11D7/08; C11D11/00; H01L21/302; H01L21/304; H01L21/306; H01L21/3065; H01L21/308; (IPC1-7): H01L21/304; C11D7/02; C11D7/08; H01L21/3065
Domestic Patent References:
| JP4103124A |
Attorney, Agent or Firm:
Mori Masazumi