LIQUID PHASE EPITAXIAL GROWTH APPARATUS

Japanese Patent JPH03285894

A

PURPOSE:To prevent the inclined concn. of raw molten material and the generation of minute crystals and to form the crystal layer of good quality by dipping a raw crystal housing part into a raw molten liquid reservoir in the upper part of a base plate housing cassette and agitating the inner part with the tip part of a shaft. CONSTITUTION:The raw molten liquid reservoir 2, the cassette 3, and waste liquid reservoir 4 are successively disposed in a crucible 1. Raw molten liquid 5 is introduced from the raw molten liquid reservoir 2 into the cassette 3 where epitaxial growth is carried out on the base plate 10 housed here, and the waste liquid is discharged into the waste liquid reservoir 4. In the above-mentioned liquid phase epitaxial growth apparatus, the shaft 6 penetrating the cover part is provided in the raw molten liquid reservoir 2, and the raw polycrystal housing part 7 which receives a raw polycrystal 8 and allows the raw molten liquid 5 to flow through freely is provided to the tip part of the shaft. The housing part 7 is dipped into the raw molten liquid 5, and the shaft 6 is put into operation to agitate the raw molten liquid 5. By this method, the inclined concn. of raw molten liquid 5 and the generation of minute crystals are prevented, and the crystal layer of good quality is obtained.

JP5200973	Board holder
JPH01268117	BOAT FOR MANUFACTURE OF MELT
JPS61122191	LIQUID-PHASE CRYSTAL GROWTH

KONISHI MASAYA

JP8335990A

December 17, 1991

March 29, 1990

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SUMITOMO ELECTRIC INDUSTRIES

C30B19/06; C30B29/42; H01L21/208; (IPC1-7): C30B19/06; C30B29/42; H01L21/208

Hideki Aoki

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