To enable the composition and the thickness of the HgCdTe layer to be maintained at a constant value in a substrate or to enable the thickness to be changed while precisely controlling the thickness in the substrate by setting the substrate and a melt for crystalline growing in a growing ample, rotating the growing ample while recognizing the angle of the substrate against the horizontal surface, and bringing the crystalline melt into contact with the substrate while maintaining the prescribed angle of the substrate.

A control of bringing CdTe substrate 7 into contact with crystalline growth melt 6 by controlling the posture while maintaining the CdTe substrate to be horizontal or while maintaining the tilting angle of the CdTe substrate becomes possible, because an improved crystalline growing apparatus can accurately monitor the angle for rotating the growing ample 3 by an angle- indicating board 10 fixed on a rotating bar 2 in the improved crystalline growing apparatus. The substrate 7 is maintained so as to be within the range of horizontal surface ±0.3° for growing HgCdTe crystalline layer having a uniform thickness and composition. Thereby the distribution of the thickness suppressed to ≤±0.001μm and the distribution of the composition expressed by x value of Hg1-XCdXTe is ≤±0.001%.