Title:
LIQUID PHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS52115784
Kind Code:
A
Abstract:
PURPOSE: To give epitaxial growth of smooth surface and uniform thickness by means fo inclining the contact plane of a single crystal substrate with a raw material solution to the horizontal plane so as to make the equiconcentration plane with respect to a solute in a solution nearly horizontal with the result that the solute in the solution is made difficult to take place.
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Inventors:
AKAI SHINICHI
MORI HIDEKI
SHIMODA TAKASHI
MORI HIDEKI
SHIMODA TAKASHI
Application Number:
JP3293476A
Publication Date:
September 28, 1977
Filing Date:
March 24, 1976
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B19/00; C01B25/08; H01L21/208; (IPC1-7): B01J17/20; C01B25/08; C01B27/02; H01L21/208