Title:
LITHOGRAPHIC APPARATUS AND DEVICE-MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2006085174
Kind Code:
A
Abstract:
To provide improved complementary phase shift mask (c:PSM) imaging techniques including a method in which scattering bars are provided on the trim mask in order to allow better CD (critical dimensions) uniformity to be achieved in the double exposure process.
The number, size and position of the scattering bars can be optimized, to achieve a desired isofocal CD and/or the desired level of sensitivity of the CD to trim exposure energy used in the second exposure step of the c:PSM process. The trim exposure dose can be regulated, and/or the trim width used on the trim mask can be optimized, to compensate for iso-dense bias so as to achieve optical proximity effect correction.
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Inventors:
KOEN VAN INGEN SCHENAU
LINDERS JOHANNES HENRICUS MARI
LINDERS JOHANNES HENRICUS MARI
Application Number:
JP2005265695A
Publication Date:
March 30, 2006
Filing Date:
September 13, 2005
Export Citation:
Assignee:
ASML NETHERLANDS BV
International Classes:
G03F1/08; G03F7/20; H01L21/027
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Toru Mori
Yutaka Yoshida
Hajime Asamura
Toru Mori
Yutaka Yoshida