To provide the method of correcting the exposure parameter of immersion type lithography equipment, and/or a computer program product.
The invention is the method of correcting the exposure parameter of immersion type lithography equipment. In this method, exposure parameter is measured using measuring beam projected via liquid between the projection system of the immersion type lithography equipment and a substrate table. Offset is searched for based on variation in physical property which affects measurement carried out using the measuring beam. Measured exposure parameter is corrected partially at least. There are provided the equipment and the method for measuring the height of an optical element connected to liquid between the projection system of the immersion type lithography equipment and the substrate table.
DONDERS SJOERD NICOLAAS LAMBER
CHRISTIAAN ALEXANDER HOOGENDAM
MERTENS JEROEN JOHANNES SOPHIA
MULKENS JOHANNES CATHARINUS HU
STREEFKERK BOB
Hajime Asamura
Yutaka Yoshida
Toru Mori
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