PURPOSE: To lessen side etching and prevent occurrences of characteristic failure in a semiconductor element and the like by raising the temperature of an object as 120-140°C when hexamethyldisilane(HMDS) is made to come into contact with the surface of the object in a state of a vapor phase.

CONSTITUTION: Before a resist film 13 is deposited on the surface of an object 11 on which a pattern is formed, the temperature of the object is raised at a temperature as 120-140°C when HMDS is made to come into contact with the surface of the object in a state of a vapor phase. Then, if the temperature of object 11 of patterning is raised, the effect of HMDS as a coupling reagent becomes strong and such a state of HMDS improves adhesion between the resist film 13 and the object 11 of patterning and lessens side etching (d). Element dimensions which are obtained in the case of a design are thus reproduced faithfully and then this process contrives fineness of each element or decrease in characteristic failure of the element.