To provide a long wavelength region surface-emission laser device which is subjected to a direct bonding operation only once and is excellent in productivity and a manufacturing method thereof.
A long wavelength region surface-emission laser device 40 is equipped with a GaAs surface-emission laser device 41 possessed of semiconductor multilayered film reflecting mirrors 2 and 5 and an InGaAs distorted quantum well active layer to function as a pumping light source of oscillation wavelength 980 nm band and a long wavelength region resonator structure 42 possessed of a long wavelength band active layer 24 which is vertically integrated over the surface-emission laser device 41 and whose oscillation laser is 1300 nm long in wavelength and dielectric multilayered film reflecting mirrors 26 and 27 of a-Si/Al2O3 provided on each side of the long wavelength band active layer 24.
| JPH11135883 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURE THEREOF |
| JPH07140363 | LASER LIGHT SOURCE DEVICE |
| JPS5227287 | SEMICONDUCTOR LASER UNIT |
MUKOHARA TOMOKAZU
YOKOUCHI NORIYUKI
KASUKAWA AKIHIKO
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