To provide a method of forming a low-carbon film for producing a copper damascene device to improve an etching process, by avoiding stress migration and forming a film having high mechanical strength.
A method of forming an interconnection for a semiconductor device by using three hard layers comprises: a process of forming a first hard layer functioning as an etch stop layer on an insulating layer formed for metal interconnection; a process of forming a second hard layer on the first hard layer; a process of forming an insulating layer on the second hard layer; a process of forming a third hard layer on the insulating layer; a process of forming a hole through the third and second hard layers, the insulating layer, and the first hard layer; and a process of filling the hole with metal to establish an interconnection. The second and third hard layers are made of carbon-doped silicon oxide made from a source gas and an oxidation-reduction gas, while controlling the carbon content in the second hard layer as a function of the flow rate of the oxidation-reduction gas.
YOSHIOKA KANAKO
SATO KIYOSHI
Akira Hori
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