Title:
LOW OXIDE TRENCH DISHING CHEMICAL MECHANICAL POLISHING
Document Type and Number:
Japanese Patent JP2020002357
Kind Code:
A
Abstract:
To provide: chemical mechanical planarization (CMP) polishing compositions, methods and systems to reduce oxide trench dishing and improve over-polishing window stability; and high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity.SOLUTION: The compositions use a unique combination of abrasives, such as ceria coated silica particles, and chemical additives, such as maltitol, lactitol, maltotriitol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-fructose, sorbitan, sucrose, ribose, inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof, as oxide trench dishing reducing additives.SELECTED DRAWING: None
Inventors:
SHI XIAOBO
KRISHNA P MURELLA
JOSEPH D ROSE
ZHOU HONGJUN
O'NEILL MARK LEONARD
KRISHNA P MURELLA
JOSEPH D ROSE
ZHOU HONGJUN
O'NEILL MARK LEONARD
Application Number:
JP2019122998A
Publication Date:
January 09, 2020
Filing Date:
July 01, 2019
Export Citation:
Assignee:
VERSUM MAT US LLC
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
| JP2013541609A | 2013-11-14 | |||
| JP2015506386A | 2015-03-02 |
Foreign References:
| US20120077419A1 | 2012-03-29 | |||
| WO2018062401A1 | 2018-04-05 |
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mitsuhashi
Kenji Kimura
Naori Kota
Satomi Hisasa
Shinji Mitsuhashi
Kenji Kimura
Naori Kota
Satomi Hisasa