Title:
LOW-RELATIVE-DIELECTRIC CONSTANT INSULATING FILM, FORMATION THEREOF, AND INTERLAYER INSULATING FILM
Document Type and Number:
Japanese Patent JPH11289011
Kind Code:
A
Abstract:
To provide a low-relative-dielectric constant insulating film which can have stable characteristics, a high adhesion to a metallic wiring layer and a high resistance to plasma, and can be suitably used as an interlayer insulating film.
The low-relative-dielectric constant insulating film includes a semiconductor substrate 21, an aromatic polyimide film 25 formed on the substrate 21 and containing a predetermined amount of fluorine, and inorganic insulating films 24A and 24B having a thickness of 1/10 or less (100 nm or less) of a thickness of the polyimide film 25 and formed on both surfaces of the film 25 as closely adhered thereto. The inorganic insulating films contain one or more selected from a group of SiO2, Si3N4 and glass.
Inventors:
IIJIMA MASAYUKI
SATO MASATOSHI
UKISHIMA YOSHIYUKI
TAKAHASHI YOSHIKAZU
YAMAKAWA HIROYUKI
SATO MASATOSHI
UKISHIMA YOSHIYUKI
TAKAHASHI YOSHIKAZU
YAMAKAWA HIROYUKI
Application Number:
JP8913498A
Publication Date:
October 19, 1999
Filing Date:
April 02, 1998
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C08J7/00; B32B9/00; B32B27/00; B32B37/00; C08G73/10; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; B32B9/00; B32B27/00; B32B31/00; C08G73/10; H01L21/312
Attorney, Agent or Firm:
Shigeo Ishijima (1 outside)
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