LOW-TEMPERATURE MOCVD PROCESSING FOR MANUFACTURING PrxCa1-xMnO3 THIN FILM

Title:

LOW-TEMPERATURE MOCVD PROCESSING FOR MANUFACTURING PrxCa1-xMnO3 THIN FILM

Document Type and Number:

Japanese Patent JP2006060199

Kind Code:

A

Abstract:

To provide a method of manufacturing a resistive random access memory device having a PCMO switching thin film.

The system comprises a process (No.12) that prepares a PCMO precursor, a process (No.14) that prepares a substrate, a process (No.16) that mounts the substrate in an MOCVD reactor a process (No.18) that deposits the PCMO thin film on the substrate by introducing the PCMO precursor into the MOCVD reactor, and has a process (No.20) that maintains the MOCVD vaporizer at the temperature range of 240 to 280°C, and the MOCVD reactor at the temperature scope of 300 to 400°C, a process (No.24) that takes the substrate deposited with the thin film out of the MOCVD reactor, and a process (No.26) that completes the resistive random access memory device.

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Inventors:

LI TINGKAI
ZHUANG WEI-WEI
LAWRENCE J CHARNESKI
EVANS DAVID R
HSU SHENG TENG

Application Number:

JP2005209243A

Publication Date:

March 02, 2006

Filing Date:

July 19, 2005

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L27/10; C23C16/40; H01L21/20; H01L21/365; H01L45/00

Attorney, Agent or Firm:

Yoshifumi Masaki

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