Title:
LOW TEMPERATURE SENSITIVE SILICON THYRISTOR
Document Type and Number:
Japanese Patent JPS52100981
Kind Code:
A
Abstract:
Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30 DEG C to +150 DEG C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50 DEG C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature.
Inventors:
SUTANREI BUI JIYASUKOORUSUKII
ROBAATO DABURIYU RAADA
HAAMAN PII SHIYATSUTEN
GOODON BII SUPERUMAN
ROBAATO DABURIYU RAADA
HAAMAN PII SHIYATSUTEN
GOODON BII SUPERUMAN
Application Number:
JP16083576A
Publication Date:
August 24, 1977
Filing Date:
December 29, 1976
Export Citation:
Assignee:
CUTLER HAMMER WORLD TRADE INC
International Classes:
H01L29/74; G01K7/01; H01L29/66; (IPC1-7): H01L29/74