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Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH0738121
Kind Code:
A
Abstract:

PURPOSE: To form a highly reliable electrode part by preventing the alloying of a gold electrode and a metal film.

CONSTITUTION: A gold electrode 16 is formed by vapor-deposition of gold on the surface of the electrode on a silicon substrate 1, aluminum 18 is vapor- deposited on the upper surface of the above-mentioned gold electrode 16 through the intermediary of a resist film 17, plasma etching treatment is conducted, and the alloying of the gold and the aluminum 18 is prevented.


Inventors:
UMEMOTO HIDETOSHI
GOTOU TOMOAKI
Application Number:
JP17949193A
Publication Date:
February 07, 1995
Filing Date:
July 21, 1993
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD
International Classes:
G01F1/68; G01F1/692; H01L29/84; (IPC1-7): H01L29/84; G01F1/68
Attorney, Agent or Firm:
Iwao Yamaguchi



 
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