PURPOSE: To manufacture a display device having a high degree of integration by stacking a silicon dioxide layer on a silicon singlecrystal material, densifying the layer via thermal treatment, then, implanting silicon ions for obtaining a thermally treated luminescent layer.

CONSTITUTION: A silicon dioxide film of 300nm thickness is, for example, stacked on the surface of a silicon singlecrystal substrate and thermally treated in nitrogen environment, for example, at 1,000°C for one hour, thereby densifying the film. Silicon ions accelerated up to 1,000keV energy, for example, is implanted to the surface of the oxide film so obtained. Thereafter, another silicon dioxide film of 50nm thickness is again stacked by use of the atmospheric pressure CVD method, so as to maintain the dielectric strength of the oxide film surface. This film, when thermally treated in nitrogen environment, for example, at, 1,050°C for approximately three hours, gives red photoluminescence in the visible ray zone. Finally, the oxide film is removed from the reverse side of the substrate and an aluminum electrode is formed on both sides thereof. Then, the substrate is divided into approximately 5mm square chips. Furthermore, the prescribed AC voltage is applied across both electrodes of the chip element, and electroluminescence is obtained from the edge of the substrate.