Title:
発光表示装置
Document Type and Number:
Japanese Patent JP6585780
Kind Code:
B2
Abstract:
To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third wiring whose potential is lower than those of the first wiring and the second wiring between the first wiring and the second wiring. In the semiconductor device, the first wiring is electrically connected to the third wiring through a first transistor in which a gate electrode layer is electrically connected to a source electrode layer, the second wiring is electrically connected to the third wiring through a second transistor in which the gate electrode layer is electrically connected to the source electrode layer, and a continuous oxide semiconductor film used for a semiconductor region of the first transistor and the second transistor is provided above or below the first wiring, the second wiring, and the third wiring.
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Inventors:
Hiroyuki Miyake
Application Number:
JP2018132037A
Publication Date:
October 02, 2019
Filing Date:
July 12, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; G02F1/1368; H01L27/32; H01L29/786; H01L51/50; H05B33/02
Domestic Patent References:
| JP2008046427A | ||||
| JP2010114213A | ||||
| JP2009042664A |