M-CONTAINING SILICON MATERIAL, WHERE M IS AT LEAST ONE ELEMENT SELECTED FROM Sn, Pb, Sb, Bi, In, Zn OR Au, AND MANUFACTURING METHOD THEREFOR

Title:

M-CONTAINING SILICON MATERIAL, WHERE M IS AT LEAST ONE ELEMENT SELECTED FROM Sn, Pb, Sb, Bi, In, Zn OR Au, AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

Japanese Patent JP2017095326

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a novel silicon material which functions as an anode active material.SOLUTION: There is provided an M-containing silicon material containing an M element, where M is at least one element selected from Sn, Pb, Sb, Bi, In, Zn or Au, having a crystal structure. There is provided a manufacturing method including a process for cooling a molten metal containing Ca, M and Si to obtain an M-containing calcium silicate, a process for reacting the M-containing calcium silicate with acid to obtain M-containing polysilane and a process of heating the M-containing polysilane at 300°C or more.SELECTED DRAWING: Figure 1

Inventors:

IYAMA AYATO
AIDA NOBUHIRO
MORI TAKASHI
HARADA MASANORI

Application Number:

JP2015231331A

Publication Date:

June 01, 2017

Filing Date:

November 27, 2015

Export Citation:

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Assignee:

TOYOTA IND CORP

International Classes:

C01B33/02; C01B33/06; H01G11/30; H01M4/38

Attorney, Agent or Firm:

Patent business corporation Kyoritsu

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