Title:
MEMS ELEMENT AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2020049628
Kind Code:
A
Abstract:
To provide an MEMS element capable of relaxing film stress by forming a highly adhesive laminate film when forming a fixed electrode film, and to provide a manufacturing method of the MEMS element.SOLUTION: In order to form a hollow structure between a movable electrode film 3 and polysilicon film 5, a sacrifice layer is removed by etching. As the result, a fixed electrode film and a movable electrode film are oppositely arranged via a spacer 4a. The sacrifice layer is removed and, thereby, the fixed electrode film in which the polysilicon film 5 having a tensile stress, silicon oxide film 6 having compression effective force and a silicon nitride film 7 having a tensile stress are laminated is formed. In particular, by forming a continuous film, even in such a structure that an interface of the polysilicon film 5 and a silicon oxide film 6 is exposed to an inside surface of a through-hole 8, peeling of the interlayer is not caused from the exposed inside surface and film stress can be reduced.SELECTED DRAWING: Figure 7
Inventors:
ARAKI SHINICHI
Application Number:
JP2018184350A
Publication Date:
April 02, 2020
Filing Date:
September 28, 2018
Export Citation:
Assignee:
NEW JAPAN RADIO CO LTD
International Classes:
B81C1/00; B81B3/00; H01L29/84; H04R19/04; H04R31/00
Domestic Patent References:
| JP2016022544A | 2016-02-08 |
Foreign References:
| US20040219698A1 | 2004-11-04 | |||
| US20150097260A1 | 2015-04-09 | |||
| WO2010079574A1 | 2010-07-15 |