Title:
ＭＥＭＳ製造方法
Document Type and Number:
Japanese Patent JP6569850
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To allow for flattening of the surface of a silicon substrate without deflecting the silicon substrate, even if a cavity is formed in the lower surface.SOLUTION: A MEMS manufacturing method includes a process for preparing a silicon substrate formed by bonding the surface of a lower substrate and the back of an upper surface on the periphery, and having a cavity on the inside of the periphery, a process for forming a first metal layer in an area on the surface of the upper substrate overlapping the cavity, a process of removing at least a part of the first metal layer and forming a first electrode, a process for forming an insulation layer on the first electrode, a process for forming a sacrificial film composed of a resist material on the insulation layer, and a process for performing etch back of the sacrificial film and an insulating film until the first electrode is exposed.SELECTED DRAWING: Figure 3A
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Inventors:
Hiroshi Yamada
Keiichi Umeda
Nakamura Yoshinari
Ryosuke Niwa
Keiichi Umeda
Nakamura Yoshinari
Ryosuke Niwa
Application Number:
JP2015116696A
Publication Date:
September 04, 2019
Filing Date:
June 09, 2015
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H03H3/007; B81C1/00; G01C19/56; H01L41/332; H03H9/24
Domestic Patent References:
| JP2002328318A | ||||
| JP10290036A | ||||
| JP2001076605A |
Foreign References:
| US20110314669 |
Attorney, Agent or Firm:
Yoshiyuki Inaba
Toshifumi Onuki
Akihiko Eguchi
Kazuhiko Naito
Mutsumi Sato
Toshifumi Onuki
Akihiko Eguchi
Kazuhiko Naito
Mutsumi Sato