Title:
MEMS sensor
Document Type and Number:
Japanese Patent JP6325329
Kind Code:
B2
Abstract:
A MEMS sensor comprises a vibrating sensing structure formed from a semiconductor substrate layer (50). The semiconductor substrate layer (50) is mounted on a pedestal comprising an electrically insulating substrate layer (52) bonded to the semiconductor substrate (50) to form a rectangular sensor chip. The pedestal further comprises an electrically insulating spacer layer (54) for mounting the sensor chip to a housing. The electrically insulating spacer layer (54) is octagonal. When the vibrating sensing structure is excited into a cos2¸ vibration mode pair, the quadrature bias arising from any mode frequency split is not affected by changes in temperature as a result of the octagonal spacer layer (54).
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Inventors:
Christopher Fel
Application Number:
JP2014092178A
Publication Date:
May 16, 2018
Filing Date:
April 28, 2014
Export Citation:
Assignee:
Atlantic Inertial Systems Limited
International Classes:
B81B3/00; G01C19/5684; B81C3/00; H01L21/301
Domestic Patent References:
| JP2010256281A | ||||
| JP2004069581A | ||||
| JP10242479A | ||||
| JP10267667A | ||||
| JP2000346648A | ||||
| JP2010514223A |
Foreign References:
| US20100270629 | ||||
| US20060150740 |
Attorney, Agent or Firm:
Hiromichi Kobayashi
Tomioka Kiyoshi
Tomioka Kiyoshi