Title:
METALLIC THIN FILM AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METALLIC THIN FILM
Document Type and Number:
Japanese Patent JP2014185393
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a metallic thin film for electronic component consisting of a Mo alloy having improved moisture resistance or oxidation resistance, and capable of maintaining low electric resistance value even through a heating process when forming the metallic thin film as a base film or a cap coating film on a low resistant main wiring film of Al or Cu, and to provide a Mo alloy sputtering target material for forming the metallic thin film.SOLUTION: There are provided a metallic thin film containing one or more kind selected from an element group A of Cr, Zr and Ta of total 3 atom% or more, Ni of 10 to 45 atom%, where total of the element group A and the Ni of 50 atom% or less, and the balance Mo with inevitable impurities, and a Mo alloy sputtering target material for forming the metallic thin film containing one or more kind selected from the element group A of Cr, Zr and Ta of total 3 atom% or more, Ni of 10 to 45 atom%, where total of the element group A and the Ni of 50 atom% or less, and the balance Mo with inevitable impurities.
Inventors:
MURATA HIDEO
Application Number:
JP2014013129A
Publication Date:
October 02, 2014
Filing Date:
January 28, 2014
Export Citation:
Assignee:
HITACHI METALS LTD
International Classes:
C22C27/04; C23C14/14; C23C14/34
Domestic Patent References:
| JP2005289046A | 2005-10-20 | |||
| JPH09165635A | 1997-06-24 | |||
| JP2010132974A | 2010-06-17 | |||
| JP2005289046A | 2005-10-20 | |||
| JPH09165635A | 1997-06-24 | |||
| JP2010132974A | 2010-06-17 |
Foreign References:
| WO2006025240A1 | 2006-03-09 | |||
| WO2006025240A1 | 2006-03-09 |
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