METHOD FOR FORMING LiNbO3 CRYSTAL THIN FILM - NIPPON TELEGRAPH & TELEPHONE

Title:

METHOD FOR FORMING LiNbO3 CRYSTAL THIN FILM

Document Type and Number:

Japanese Patent JP2006219339

Kind Code:

A

Abstract:

To easily control the polarization direction of LiNbO3 crystal.

Firstly, an LiNbO3 film in an amorphous state is formed on the A side of a sapphire substrate (step S1). For forming the LiNbO3 film, it is able to use a sputtering method using an electronic cyclotron resonance plasma. Secondly, an LiNbO3 crystal thin film that exhibits a-axial orientation is formed by heating and crystallizing the formed LiNbO3 film (step S2), wherein it is preferable to heat it at a temperature of 320°C or higher.

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Inventors:

AKAZAWA MASAYOSHI
SHIMADA MASARU

Application Number:

JP2005034347A

Publication Date:

August 24, 2006

Filing Date:

February 10, 2005

Export Citation:

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