Title:
METHOD FOR GROWING LiTaO3 SINGLE CRYSTAL AND METHOD FOR PROCESSING LiTaO3 SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2018135228
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing a LiTaOsingle crystal, using a LiTaOcrystal raw material (melting point of 1650°C) having a congruent composition and a platinum crucible (melting point of 1760°C), having melting points close to each other.SOLUTION: A LiTaOsingle crystal is grown by a unidirectional solidification crystal growth method of charging a LiTaOseed crystal 7 into a lower portion in a platinum crucible 1, charging a LiTaOcrystal raw material 8 having a congruent composition on the LiTaOseed crystal, forming a temperature gradient in the vertical direction in the platinum crucible by a carbon resistance heater 3 and dissolving an upper portion of the LiTaOseed crystal and the LiTaOcrystal raw material to solidify the melt. Since the carbon resistance heater 3 excellent in temperature control is used, the platinum crucible having a melting point close to that of the LiTaOcrystal raw material having a congruent composition can be applied.SELECTED DRAWING: Figure 1
Inventors:
NISHIMURA EIICHIRO
HOSHIKAWA KEIGO
HOSHIKAWA KEIGO
Application Number:
JP2017029683A
Publication Date:
August 30, 2018
Filing Date:
February 21, 2017
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
UNIV SHINSHU
UNIV SHINSHU
International Classes:
C30B11/02; C30B29/30; F27B14/04; F27B14/08
Domestic Patent References:
| JP2011126719A | 2011-06-30 | |||
| JPH03290389A | 1991-12-20 | |||
| JPH0840795A | 1996-02-13 | |||
| JPH1135393A | 1999-02-09 | |||
| JP2016141605A | 2016-08-08 | |||
| JP2000199881A | 2000-07-18 | |||
| JP2004328712A | 2004-11-18 |
Foreign References:
| US20060150891A1 | 2006-07-13 |
Attorney, Agent or Firm:
Akira Ueda
Masahiro Koizumi
Masahiro Koizumi