To provide a method of producing a Ge-Sb-Te sputtering target of a thin film medium for recording information by utilizing the phase transformation of a recording layer material.

In this method of producing a Ge-Sb-Te sputtering target material, an alloy powder containing Ge, Sb and Te and having tap density (relative density) of ≥50% is allowed to flow into a die and is subjected to cold or warm compacting, and the compacted material whose density after the cold compacting is ≥95% is sintered by being heated in Ar or vacuum atmosphere, by which the content of oxygen in the sintered body is controlled to ≤700 ppm.