Title:
METHOD FOR PRODUCING SiC MEMBER FOR SEMICONDUCTOR PRODUCTION PROCESS
Document Type and Number:
Japanese Patent JP2012126604
Kind Code:
A
Abstract:
To provide a method for producing an SiC member for a semiconductor production process, by a cleaning method with an acid, which is low-cost and has a small environmental load, relative to a low-cost molding method such as extrusion molding.
After drying a molded body in aqueous-system extrusion molding, a degreasing step by heat treatment at a temperature of 350-450°C in an inert gas atmosphere and an acid cleaning step are carried out.
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Inventors:
MAENO YASUSHI
ARAI KANJI
ARAI KANJI
Application Number:
JP2010279471A
Publication Date:
July 05, 2012
Filing Date:
December 15, 2010
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C04B35/565; B28B11/00; C04B35/626; C04B35/638