磁気セル及び磁気メモリ

Japanese Patent JP4215609

B2

It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of $h>\mathrm{t1}+\mathrm{t2}>\frac{30}{30+L}xh$ where h represents the height of the electrically conductive pillar, t 1 represents the thickness of the current diffusion preventing layer, t 2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.

JP2010515820	Formation of nanostructures containing composition-modulated ferromagnetic layers by pulsed ECD
JPS63205966	MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT
WO/2003/015170	SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD

Shigeru Haneda
Nakamura Shiho
Yuichi Osawa

JP2003338099A

January 28, 2009

September 29, 2003

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Toshiba Corporation

H01L21/8246; H01L27/105; G11C11/15; H01L43/08

JP2003077269A
JP2002343794A
JP2003229544A
JP2000331473A
JP2003204095A
JP2003141873A
JP2003526913A
JP2003086772A
JP2003092389A
JP10011719A
JP2001168418A
JP2002111096A

Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki

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