Title:
磁気メモリセル及び磁気ランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP5461683
Kind Code:
B2
Abstract:
A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.
Inventors:
Hideo Ohno
Shoji Ikeda
Katsuya Miura
Kazuo Kono
Riichiro Takemura
Hiromasa Takahashi
Shoji Ikeda
Katsuya Miura
Kazuo Kono
Riichiro Takemura
Hiromasa Takahashi
Application Number:
JP2012503055A
Publication Date:
April 02, 2014
Filing Date:
February 17, 2011
Export Citation:
Assignee:
株式会社日立製作所
国立大学法人東北大学
国立大学法人東北大学
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| JP2007311514A | 2007-11-29 | |||
| JP2007115320A | 2007-05-10 | |||
| JP2010225783A | 2010-10-07 | |||
| JP2009152259A | 2009-07-09 | |||
| JP2002305337A | 2002-10-18 | |||
| JP2005277147A | 2005-10-06 | |||
| JP2007123637A | 2007-05-17 | |||
| JP2001250206A | 2001-09-14 | |||
| JP2007311514A | 2007-11-29 | |||
| JP2007115320A | 2007-05-10 | |||
| JP2010225783A | 2010-10-07 | |||
| JP2009152259A | 2009-07-09 | |||
| JP2002305337A | 2002-10-18 | |||
| JP2005277147A | 2005-10-06 | |||
| JP2007123637A | 2007-05-17 | |||
| JP2001250206A | 2001-09-14 |
Attorney, Agent or Firm:
Yusuke Hiraki
Sekiya Mitsuo
Toshiaki Watanabe
Sekiya Mitsuo
Toshiaki Watanabe