Title:
磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法
Document Type and Number:
Japanese Patent JP4365576
Kind Code:
B2
Abstract:
A magnetic memory device includes a magneto-resistance effect element including a magnetic sensitive layer whose magnetization direction changes according to an external magnetic field; a write line to which a write current is supplied to apply an external magnetic field to the magnetic sensitive layer; and a write current drive circuit including a current direction control section for controlling the direction of the write current in the write line and a current amount control section for controlling the amount of the write current in the write line to a constant value.
Inventors:
E Saki Ichiro Jo
Yuji Kakinuma
Keiji Koga
Yuji Kakinuma
Keiji Koga
Application Number:
JP2002339932A
Publication Date:
November 18, 2009
Filing Date:
November 22, 2002
Export Citation:
Assignee:
tdk Corporation
International Classes:
G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2003132670A | ||||
| JP2003123462A | ||||
| JP2003123464A | ||||
| JP2004185743A | ||||
| JP2002343077A | ||||
| JP2002319661A | ||||
| JP2001273759A | ||||
| JP2002170376A |
Attorney, Agent or Firm:
Yasushi Santanzaki
Yoichiro Fujishima
Yoichiro Fujishima