Title:
磁気メモリ素子およびその製造方法ならびに反応チャンバ
Document Type and Number:
Japanese Patent JP5085008
Kind Code:
B2
Abstract:
In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
Inventors:
Kim Tai
Car
Gold plant
Car
Gold plant
Application Number:
JP2005020518A
Publication Date:
November 28, 2012
Filing Date:
January 28, 2005
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C11/15; H01L21/8246; G11C11/16; H01L27/105; H01L43/08; H01L43/12; H01L27/22
Domestic Patent References:
| JP2002246567A | ||||
| JP53045991A |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro