Title:
MAGNETIC MEMORY, RECORDING METHOD FOR MAGNETIC MEMORY, AND METHOD OF READING MAGNETIC MEMORY
Document Type and Number:
Japanese Patent JP2018148159
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetic memory capable of suppressing increase in cost of manufacture while recording multivalued information in one memory cell.SOLUTION: Provided is a magnetic memory comprising: first and second tunnel junction element each having a lamination structure consisting of a reference layer whose magnetization direction is fixed, a recording layer whose magnetization direction can be reversed, and an insulating layer held between the reference layer and the recording layer; a first selection transistor electrically connected with one ends of the first and second tunnel junction elements; first wiring electrically connected with the other end of the first tunnel junction element; and second wiring electrically connected with the other end of the second tunnel junction element.SELECTED DRAWING: Figure 2
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Inventors:
OMORI HIROYUKI
HOSOMI MASAKATSU
HIGO YUTAKA
UCHIDA HIROYUKI
HASE NAOKI
SATO AKIRA
HOSOMI MASAKATSU
HIGO YUTAKA
UCHIDA HIROYUKI
HASE NAOKI
SATO AKIRA
Application Number:
JP2017044678A
Publication Date:
September 20, 2018
Filing Date:
March 09, 2017
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto